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Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSX-H series” suitable for switching power supplies of industrial equipment. They are “TPH2R408QM” and “TPH4R008QM” that use the SOP Advance(N)[1] surface-mount-type package offering land-pattern's industrial compatibility, and “TPN8R408QM” and “TPN12008QM” that use the TSON Advance package.

Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM

By adopting the latest generation U-MOSX-H process with a low voltage trench structure, the new products feature industry-leading[2] low drain-source On-resistance. And by optimizing the device structure, they have improved the tradeoff between the On-resistance and output charge[3]. This can reduce the conduction loss and help to reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H, reducing the values of "drain-source On-resistance × gate switch charge[4]", a figure of merit in switching applications.

Notes :
[1] SOP Advance(N) : 4.90 × 6.10 mm (typ.) package offering land-pattern's industrial compatibility more than the SOP Advance.
[2] Among products with the same rating, as of June, 2020. Toshiba survey.
[3] Compared with TPH4R008NH (U-MOSVIII-H series), TPH2R408QM has improved its "typical drain-source On-resistance × typical output charge" by about 31 %.
[4] Compared with TPH4R008NH (U-MOSVIII-H series), TPH2R408QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 10 %.

Features

  • Industry’s lowest level[2] On-resistance :

RDS(ON)=2.43 mΩ (max) @VGS=10 V (TPH2R408QM)
RDS(ON)=4 mΩ (max) @VGS=10 V (TPH4R008QM)
RDS(ON)=8.4 mΩ (max) @VGS=10 V (TPN8R408QM)
RDS(ON)=12.3 mΩ (max) @VGS=10 V (TPN12008QM)

  • Low output charge, low gate switch charge
  • Low gate voltage drive (6 V drive)

Applications

  • Switching power supplies for industrial equipment(High efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
  • Motor control equipment (Motor drivers, etc.)

www.toshiba.semicon-storage.com

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